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| UNISONIC TECHNOLOGIES CO., LTD 2SB1260 POWER TRANSISTOR PNP SILICON TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. *Low VCE(SAT) 1 TO-252 *Pb-free plating product number: 2SB1260L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T Package SOT-89 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tape Reel Tape Reel Tube 2SB1260L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, TN3: TO-252 (3) refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-017,C 2SB1260 ABSOLUATE MAXIUM RATINGS (Ta = 25 ) PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Peak Collector Current (single pulse, Pw=100ms) DC Collector Current Power Dissipation SOT-89 TO-252 SYMBOL VCBO VCEO VEBO ICM IC PD PNP SILICON TRANSISTOR RATINGS -80 -80 -5 -2 -1 0.5 1.9 +150 -40 ~ +150 UNIT V V V A A W W Operating Temperature TJ Storage Temperature TSTG Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified) PARAMETER SYMBOL Collector Base Breakdown Voltage BVCBO Collector Emitter Breakdown Voltage BVCEO Emitter Base Breakdown Voltage BVEBO Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain(Note 1) hFE Collector-Emitter Saturation Voltage VCE(SAT) Transition Frequency fT Output Capacitance Cob Note 1: Pulse test: PW <300s, Duty Cycle<2% TEST CONDITIONS IC= -50 A IC= -1mA IE= -50 A VCB=-60V VEB=-4V VCE=-3V, IOUT=-0.1A IC=-500mA, IB=-50mA VCE= -5V, IE=50mA, f=30MHz VCB=-10V, IE=0, f=1MHz MIN -80 -80 -5 TYP MAX UNIT V V V A A V MHz pF 82 100 25 -1 -1 390 -0.4 CLASSIFICATION OF hFE RANK RANGE P 82 ~ 180 Q 120 ~ 270 R 180 ~ 390 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R208-017,C 2SB1260 TYPICAL CHARACTERICS Grounded Emitter Propagation Characteristics -1000 VCE = -5V -1.0 PNP SILICON TRANSISTOR Grounded Emitter Output Characteristics Ta=25 -0.45mA -0.8 -0.6 -0.4 -0.2 -0.4mA -0.35mA -0.3mA -0.25mA -0.2mA -0.15mA -0.1mA -0.05mA Collector Current, Ic(mA) -100 -10 -1 Collector Current, Ic(mA) Ta=25 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Base to Emitter Voltage, VBE(V) IB =0mA 0 0 -0.2 -0.4-0.6 -0.8-1.0-1.2 -1.4 -1.6-1.8-2.0 Collector to Emitter Voltage, VCE(V) 1000 500 Ta=25 Collector Saturation Voltage, VCE(SAT) ( V) DC Current Gain vs. Collector Current Collector-emitter Saturation Voltage vs. Collector Current Ta=25 -2 -1 -0.5 -0.2 -0.1 -0.05 Ic/IB=20 10 DC Current Gain, hFE 200 VcE= -3V 100 50 VcE= -1V 20 10 -1 -2 -5 -10 -20 -50-100-200-500-1000-2000 Collector Current, Ic(mA) -0.02 -0.01 -1 -2 -5 -10 -20 -50-100-200-500-1000-2000 Collector Current, Ic(mA) Gain Bandwidth Product vs. Emitter Current 1000 Collector Output Capacitance, Cob (pF) Transition Frequency, fT(MHz) 500 200 100 50 20 10 5 2 1 1 Ta=25 VCE = -5V 1000 500 200 100 50 20 10 5 Collector Output Capacitance vs. Collector -Base Voltage Ta=25 f=1MHz IE=0A 2 5 10 20 50 100200 5001000 Emitter Current, IE (mA) 2 1 -0.1 -0.2 -0.5-1 -2 -5 -10 -20 -50 -100 Collector to Base Voltage, VCB(V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R208-017,C 2SB1260 TYPICAL CHARACTERICS(Cont.) Emitter Input Capacitance vs. EmitterBase Voltage Ta=25 f=1MHz Ic=0A -2 -1 PNP SILICON TRANSISTOR Safe Operating Area 1000 Emitter Input Capacitance, Cib (pF) 500 =1 PW Collector Current, Ic (A) 0m 200 100 50 -0.5 -0.2 PW s =1 0 0m s DC -0.1 20 -0.1 -0.2 -0.5 -1 -2 -5 -10 -0.05 Ta=25 *Single pulse -1 -2 -5 -10 -20 -50 -100 -0.5 Emitter To Base Voltage, VEB(V) Collector to Emitter Voltage, VCE(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R208-017,C |
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